7nm 后工艺节点发展趋势汇总

数据来源自 wiki

厂商	工艺节点名称	晶体管密度 (MTr/mm²)	SRAM bit-cell size (μm²)	发布年份
Samsung	7 LPP	95.08–100.59	0.0262	2018
Samsung	6 LPP	Unknown	Unknown	2020
Samsung	5 LPE	126.9	0.021	2020
Samsung	5 LPP	Unknown	0.021	2022
Samsung	4 LPE (SF 4 E)	137	0.0262	2021
Samsung	4 LPP (SF 4)	137	0.0262	2022
Samsung	4 LPP+ (SF 4 P)	Unknown	Unknown	2023
Samsung	4 HPC (SF 4 X)	Unknown	Unknown	2025 Q 1
Samsung	4 LPA (SF 4 U)	Unknown	Unknown	2025
Samsung	3 GAE (SF 3 E)	150	Unknown	2022
Samsung	3 GAP (SF 3)	190	Unknown	2024 H 2
Samsung	SF 2	231	Unknown	2025
Samsung	SF 2 P	Unknown	Unknown	2026
Samsung	SF 2 X	Unknown	Unknown	2026
Samsung	SF 2 Z	Unknown	Unknown	2027
TSMC	N 7	91.2–96.5	0.027	2018
TSMC	N 7 P	91.2–96.5	0.027	2019
TSMC	N 7+	113.9	Unknown	2019
TSMC	N 6	114.2	Unknown	2020
TSMC	N 5	138.2	0.021	2020
TSMC	N 5 P	138.2	Unknown	2021
TSMC	N 4	143.7	Unknown	2022
TSMC	N 4 P	143.7	Unknown	2022
TSMC	N 3 (N 3 B)	197	0.0199	2022 Q 4
TSMC	N 3 E	216	0.021	2023 Q 4
TSMC	N 3 P	224	Unknown	2024 H 2
TSMC	N 3 X	224	Unknown	2025 H 2
TSMC	N 2	313	0.0175	2025 H 2
TSMC	N 2 P	313	Unknown	2026 H 2
TSMC	N 2 X	Unknown	Unknown	2027
Intel	Intel 7	60.41–63.64	0.0367	2021
Intel	4 N	123.4–129.82	0.024	2023
Intel	N 4 X	123.4–129.82	0.024	2024
Intel	N 4 C	123.4–129.82	0.024	2025
Intel	3	143.37	0.024	2024 H 2
Intel	20 A	Unknown	Unknown	2024
Intel	18 A	238	0.021	2025 H 2
SMIC	N+1 (>7 nm)	89	Unknown	2021
SMIC	N+2 (7 nm)	Unknown	Unknown	2021

结论

• 7nm 之后晶体管密度缩放大致可以按节点线性缩放而非之前平方关系
• 现在 SMIC 7nm 大致对标 TSMC 2018/2019 年技术节点，不考虑成本单从密度上有 5 年左右落差
• 目前 SOTA GPU 使用 5 nm 工艺，国产 7nm 大致密度差距 1.5x，而考虑 2 nm 工艺节点，差距大致 3 x
• SMIC 当年技术看起来比 Intel 强