Bsim3 学习笔记3

I-V model

Channel charge and mobility, which are the two key factors influencing the I-V characteristics.

The drift current components due to the electric field E.

The diffusion current components due to the carrier concentration gradient.

 

Channel Charge Density Model

 

Mobility Model

Piece-wise mobility models

The scattering mechanisms responsible for the surface mobility include phonons, coulombic scattering, and surface roughness scattering。

The physical meaning of E eƒƒ can be interpreted as the average electrical field experienced by the carriers in the inversion layer.