随笔分类 -  BSIM

Bsim3 学习笔记13
摘要：RF and Other Compact Model Applications In this chapter, we discuss some examples of new applications using BSIM3v3 in RF modeling, statistical modeli 阅读全文
posted @ 2017-01-11 13:42 秋水小战士 阅读(137) 评论(0) 推荐(0)
Bsim3 学习笔记12
摘要：Model Parameter Extraction 提取 There are two different optimization strategies which can be used for parameter extraction: global optimization and loca 阅读全文
posted @ 2017-01-11 13:41 秋水小战士 阅读(186) 评论(0) 推荐(0)
Bsim3 学习笔记11
摘要：Model Testing Requirements for a MOSFET Model in Circuit Simulation (1) It should include most or all of the important physical effects in modern MOSF 阅读全文
posted @ 2017-01-11 13:40 秋水小战士 阅读(211) 评论(0) 推荐(0)
Bsim3 学习笔记10
摘要：BSIM3v3 Model Implementation The enhancement of the continuity and smoothness of the BSIM3v3 model equations has been discussed in Chapter 4. In this 阅读全文
posted @ 2017-01-11 13:37 秋水小战士 阅读(276) 评论(0) 推荐(0)
Bsim3 学习笔记9
摘要：Non-quasi Static (NQS) Model An non-quasi-static (NQS) model is desirable in some mixed signal IC and radio frequency (RF) applications. For long chan 阅读全文
posted @ 2017-01-11 13:36 秋水小战士 阅读(144) 评论(0) 推荐(0)
Bsim3 学习笔记8
摘要：Temperature Dependence Model A number of important model parameters such as mobility, threshold voltage, saturation velocity, parasitic series resista 阅读全文
posted @ 2017-01-11 13:35 秋水小战士 阅读(124) 评论(0) 推荐(0)
Bsim3 学习笔记7
摘要：Source/Drain Parasitics Model 源漏寄生模型 Parasitic Components in a MOSFET the gate resistance Rg gate/source overlap capacitance Cgso gate/drain overlap c 阅读全文
posted @ 2017-01-11 13:34 秋水小战士 阅读(274) 评论(0) 推荐(0)
Bsim3 学习笔记6
摘要：Noise Model Good noise models in circuit simulators are critical to analog and RF applications. Two types of noise, thermal and flicker, are important 阅读全文
posted @ 2017-01-11 13:32 秋水小战士 阅读(179) 评论(0) 推荐(0)
Bsim3 学习笔记5
摘要：Substrate Current Model Impact ionization is the physical mechanism for the generation of substrate current. As the channel length of MOSFETs is reduc 阅读全文
posted @ 2017-01-11 13:30 秋水小战士 阅读(143) 评论(0) 推荐(0)
Bsim3 学习笔记4
摘要：Capacitance model Depending on the magnitude of the time-varying voltages, the dynamic operation can be classified as large signal operation or small 阅读全文
posted @ 2017-01-11 13:27 秋水小战士 阅读(250) 评论(0) 推荐(0)
Bsim3 学习笔记3
摘要：I-V model Channel charge and mobility, which are the two key factors influencing the I-V characteristics. The drift current components due to the elec 阅读全文
posted @ 2017-01-11 13:26 秋水小战士 阅读(153) 评论(0) 推荐(0)
Bsim3 学习笔记2
摘要：Threshold voltage model Vth对器件操作有三种操作区： Vg>>Vth in strong inversion region, drift current is dominant. Vg<<Vth in weak inversion region, diffusion cur 阅读全文
posted @ 2017-01-11 13:24 秋水小战士 阅读(212) 评论(0) 推荐(0)
Bsim3 学习笔记1
摘要：Normal short channel effects The threshold voltage of a long channel device is independent of the channel length L and the drain voltage Vd . Vth decr 阅读全文
posted @ 2017-01-11 13:09 秋水小战士 阅读(1200) 评论(0) 推荐(0)