SDRAM_Init初始化【 记录备忘】

//宏定义
#define BANK                     ((uint32_t)2)

#define BUSRT_LENGTH_1           ((uint16_t)0x0000)
#define BUSRT_LENGTH_2           ((uint16_t)0x0001)
#define BUSRT_LENGTH_4           ((uint16_t)0x0002)
#define BUSRT_LENGTH_8           ((uint16_t)0x0003)
#define BUSRT_LENGTH_FULLPAGE    ((uint16_t)0x0007)

#define BUSRT_TYPE_SEQUENTIAL    ((uint16_t)0x0000)
#define BUSRT_TYPE_INTERLEAVED   ((uint16_t)0x0008)

#define LATENCY_MODE_CAS_2       ((uint16_t)0x0020)
#define LATENCY_MODE_CAS_3       ((uint16_t)0x0030)

#define OPERATING_MODE           ((uint16_t)0x0000)

#define WRITE_BURST_PROGRAMME    ((uint16_t)0x0000)
#define WRITE_BURST_SINGLE       ((uint16_t)0x0200)

#define REFRESH_RATE             ((uint32_t)1600)

//部分初始化
  hsdram1.Instance = FMC_SDRAM_DEVICE;
  /* hsdram1.Init */
  hsdram1.Init.SDBank = FMC_SDRAM_BANK2;
  hsdram1.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_9;
  hsdram1.Init.RowBitsNumber = FMC_SDRAM_ROW_BITS_NUM_12;
  hsdram1.Init.MemoryDataWidth = FMC_SDRAM_MEM_BUS_WIDTH_16;
  hsdram1.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4;
  hsdram1.Init.CASLatency = FMC_SDRAM_CAS_LATENCY_2;
  hsdram1.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE;
  hsdram1.Init.SDClockPeriod = FMC_SDRAM_CLOCK_PERIOD_2;
  hsdram1.Init.ReadBurst = FMC_SDRAM_RBURST_DISABLE;
  hsdram1.Init.ReadPipeDelay = FMC_SDRAM_RPIPE_DELAY_1;
  /* SdramTiming */
  SdramTiming.LoadToActiveDelay = 2;
  SdramTiming.ExitSelfRefreshDelay = 8;
  SdramTiming.SelfRefreshTime = 5;
  SdramTiming.RowCycleDelay = 6;
  SdramTiming.WriteRecoveryTime = 3;
  SdramTiming.RPDelay = 2;
  SdramTiming.RCDDelay = 2;

 

static int SendCommand(uint32_t CommandMode, uint32_t Bank, uint32_t RefreshNum, uint32_t RegVal) //发送命令函数
{
	uint32_t CommandTarget;
	FMC_SDRAM_CommandTypeDef Command;

	if(Bank == 1)   //bank选择
	{
		CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1;
	}
	if(Bank == 2)
	{
		CommandTarget = FMC_SDRAM_CMD_TARGET_BANK2;
	}

	Command.CommandMode = CommandMode;  //command
	Command.CommandTarget = CommandTarget;  //SDRAM bank1/2
	Command.AutoRefreshNumber = RefreshNum;   //连续发出的自动刷新命令数
	Command.ModeRegisterDefinition = RegVal;

	if(HAL_SDRAM_SendCommand(&hsdram1, &Command, 0x1000) != HAL_OK)
	{
		return -1;
	}
	return 0;
}

void SDRAM_Init()  //初始化
{
	uint32_t temp;

	SendCommand(FMC_SDRAM_CMD_CLK_ENABLE, BANK, 1, 0);  //Start clock

	HAL_Delay(1);  //At least 100 us

	SendCommand(FMC_SDRAM_CMD_PALL, BANK, 1, 0);   //FMC SDRAM Command Mode

	SendCommand(FMC_SDRAM_CMD_AUTOREFRESH_MODE, BANK, 1, 0);

	temp = (uint32_t)(BUSRT_LENGTH_1 | BUSRT_TYPE_SEQUENTIAL | LATENCY_MODE_CAS_2 |
			OPERATING_MODE | WRITE_BURST_PROGRAMME);
	SendCommand(FMC_SDRAM_CMD_LOAD_MODE, BANK, 1, temp);

	HAL_SDRAM_ProgramRefreshRate(&hsdram1, REFRESH_RATE);
}

 硬件参数配置（IS42/45S81600F）根据SDRAM的datasheet设置