模拟集成电路操作/仿真零碎小知识

建议回顾时采用搜索关键字的方式定位所需。
region数字的含义*********
https://bbs.eetop.cn/forum.php?mod=viewthread&tid=860648&extra=page%3D1&page=3
region数字的含义：（MOS）/ （Bipolar）

• 0 cut-off截止区 / off
  1 triode线性区 / fwd（Forward Active）
  2 saturation饱和区 / rev（Reverse Active）
  3 sub-threshold亚阈值区 / sat（Saturation）
  4 breakdown击穿区 / breakdown

关于三极管的各个分区的解释，如下所示：

• in spectre manual
  The device region is If
  breakdown ■ bvsub is given and VCS >= bvsub
  ■ bvbe is given and VBE <= bvbe
  ■ bvce is given and VCE >= bvce
  saturation VBE > vbefwd and VBC > vbcfwd
  reverse VBC > vbcfwd and VBE <= Vbefwd
  off none of the above conditions are true
  no description for "fwd", but I think it should be
  fwd VBE > vbefwd and VBC <= vbcfwd

Off (Cut-off Region): In this region, the BJT is essentially inactive. Both the base-emitter and base-collector junctions are reverse-biased. There is no significant current flow through the collector, essentially the transistor acts like an open switch.
Fwd (Forward Active Region): In the forward active region, the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. This region is where a BJT acts as an amplifier; the collector current is approximately proportional to the base current but significantly larger, depending on the beta (β) or current gain of the transistor.
Rev (Reverse Active Region): Here, the base-emitter junction is reverse-biased and the base-collector junction is forward-biased. This is not a common mode for standard operation because the transistor exhibits much less gain in this configuration. It’s generally avoided in typical amplifier designs.
Sat (Saturation Region): In this region, both the base-emitter and base-collector junctions are forward-biased. The transistor conducts heavily, and the collector-emitter voltage is at a minimum. In this region, the BJT acts like a closed switch. This region is crucial for switch applications.
Breakdown (Breakdown Region): When the voltage across the BJT exceeds certain limits, the transistor enters the breakdown region. This can occur either at the base-collector or the emitter-collector junctions, leading to a breakdown where the BJT might start to conduct uncontrollably, potentially damaging the device.

关于亚阈值区和深线性区，这篇博客中有所总结：
https://blog.csdn.net/qq_42479394/article/details/126503938?fromshare=blogdetail&sharetype=blogdetail&sharerId=126503938&sharerefer=PC&sharesource=weixin_62620420&sharefrom=from_link

virtuoso library manager 重命名操作****************
在对cell和view重名命的时候要勾选update instance，这样调用该模块的电路或者版图会同步调用重命名后的cell view，编辑的时候会高亮，shift+x（check and save）即可。