器件：IGBT相关

IGBTs: Frequently Asked Questions (FAQs)：

https://www.powerelectronics.com/technologies/discrete-power-semis/article/21861263/igbts-frequently-asked-questions-faqs 

Do IGBTs require a negative gate-drive voltage to ensure turn off or to hold the device off?

Modern trench gate depletion stop-type IGBTs have excellent noise immunity (in terms of being able to withstand capability to a high dv/dt event at the collector) and work well with 0 to +15 V gate drive signals (VGE = 0 V ensures device turn off and hold off). Furthermore, many modern day gate drivers have relatively low-output impedance and help tie the gate tightly to the emitter when the device is in the off state. As a result, in many applications, such as appliance motor drives, there is essentially no requirement for a negative gate-emitter voltage to be applied to turn-off or hold-off the IGBT. However, in some industrial applications, where the environment is relatively noisier, it may become necessary to provide a negative gate-emitter voltage (applied VGE voltage swing is -5 to +15 V for example). This helps enable a higher level of dv/dt withstand immunity for the device. A negative gate-emitter applied voltage also helps to discharge the gate-collector capacitance relatively faster at turn-off. This helps lower the turn-off switching loss to a certain extent.