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GaN 器件第三象限导通特性

2025-11-16 14:35  斑鸠,一生。  阅读(1)  评论(0)    收藏  举报

 一、原理

  The condition to turn on the channel for reverse conduction is the gate to drain voltage Vgd is higher than the threshold voltage (VGS(th)).

  Vgd > Vth 时,GaN 工作在第三象限。

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二、特性

  GaN反向导通(第三象限导通)的伏安特性等效电路是一个含有导通电压的二极管和一个定值电阻。

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  If negative bias (-Vgs_off) is applied, Vsd>Vth+Vgs_off.     Vsd(@Vgs=-Vgs_off) = Vsd(@Vgs=0) + Vgs_off

  At off operation, conduction loss = Vsd × Isd =Vsd(@Vgs=0) +Vgs_off)× Isd

 

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三、代价

  Negative bias is an effective means for false turn-on preventive measures but the trade-off is conduction loss. Please consider negative bias value and the dead time.